Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
نویسندگان
چکیده
منابع مشابه
Atomic layer deposition (ALD): from precursors to thin film structures
The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...
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3 Preface 4 List of publications 5 List of symbols and abbreviations 6
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2016
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4937991